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參數(shù)資料
| 型號(hào)： | 5SDD10T1800 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1013 A, 1800 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 5SDD10T1800 |
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04 Jul-10
2 of 6
Major Ratings
Value
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 150 °C
5SDD 10T1800
5SDD 10T1600
1 800
1 600
V
IFAVm
Average forward current
Tc = 85 °C
1 013
A
IFRMS
RMS forward current
Tc = 85 °C
1 592
A
IRRM
Repetitive reverse current
VR = VRRM
30
mA
tp = 10 ms
13 500
IFSM
Non repetitive peak surge current
half sine pulse, VR = 0 V
tp = 8.3 ms
14 400
A
tp = 10 ms
10 800
IFSM
Non repetitive peak surge current
half sine pulse, VR = 0.7 VRRM
tp = 8.3 ms
11 500
A
tp = 10 ms
910 000
I
2t
Limiting load integral
half sine pulse, VR = 0 V
tp = 8.3 ms
860 000
A
2s
tp = 10 ms
583 000
I
2t
Limiting load integral
half sine pulse, VR = 0.7 VRRM
tp = 8.3 ms
549 000
A
2s
Tjmin -Tjmax
Operating temperature range
-40 ÷ 150
°C
TSTG
Storage temperature range
-40 ÷ 175
°C
Unless otherwise specified Tj = 150 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
0.934
V
rT
Forward slope resistance
IF1 = 1 600 A, IF2 = 4 000 A
0.257
m
VFM
Maximum forward voltage
IFM =2000 A, Tj = 25 °C
1.40
V
Qrr
Recovered charge
VR = 100 V, IFM = 1000 A, di/dt = -30 A/s
550
C
Unless otherwise specified Tj = 150 °C
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