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參數(shù)資料
| 型號(hào)： | 5SDD06D5800 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 662 A, 5800 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | 5SDD06D5800 |
5SDD 06D6000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/009/98a Jul-10
2 of 5
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 150 °C
5SDD 06D6000
5SDD 06D5800
6 000
5 800
V
IFAVm
Average forward current
Tc = 85 °C
662
A
IFRMS
RMS forward current
1 040
A
IRRM
Repetitive reverse current
VR = VRRM
50
mA
tp = 8.3 ms
12 500
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse, Tj = 25 °C
tp = 10 ms
11 700
A
tp = 8.3 ms
11 200
A
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
10 500
A
tp = 8.3 ms
648 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse, Tj = 25 °C
tp = 10 ms
684 450
A
2s
tp = 8.3 ms
522 000
A
2s
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
551 250
A
2s
Tjmin -Tjmax
Operating temperature range
-40 ÷ 150
°C
TSTG
Storage temperature range
-40 ÷ 150
°C
Unless otherwise specified Tj = 150 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage,
IF1 = 1 040 A, IF2 = 3 120 A;
1.066
V
rT
Forward slope resistance
0.778
m
VFM
Maximum forward voltage
IFM = 900 A
1.750
V
Qrr
Recovered charge
VR = 100 V, IFM = 1 000 A, diF/dt = -10 A/
s
2 000
C
Unless otherwise specified Tj = 150 °C
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