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參數(shù)資料
| 型號(hào)： | 5SDD0100Z0400 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10029 A, 400 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | 5SDD0100Z0400 |
5SDD 0100Z0400
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 6
Doc. No. 5SYA1180-00 July 06
On-state
IFAVM
Max. average on-state current
10029 A
Tc =
85 °C
Half sine pulse
IFRMS
Max. RMS on-state current
15753 A
Tc =
85 °C
Half sine pulse
64000 A
tp =
8.3 ms
IFSM
Max. peak non-repetitive surge current
60000 A
tp =
10 ms
VR= 0 V
Half sine pulse
17049 kA
2s t
p
=
8.3 ms
∫I2dt
Max. surge current integral
18000 kA
2s t
p
=
10 ms
VR= 0 V
Half sine pulse
0.960 V
IF =
8000 A
VF max
Max. on-state voltage
0.860 V
IF =
5000 A
VF0
Max. Threshold voltage
0.754 V
rF
Max. Slope resistance
0.025 m
I = 10 000…30 000 A
Qrr
Typ. Recovered charge
400 C
IF = 1 000 A, di/dt = -30 A/s,
VR = 100 V
Unless otherwise specified Tj = 180 °C
Thermal characteristics
Tj
Operating junction temperature range
-40...180 °C
Tstg
Storage temperature range
-40...180 °C
7.4 K/kW
Anode side cooled
23.5 K/kW
Cathode side cooled
Rth(j-c)
Thermal resistance
junction to case
5.6 K/kW
Double side cooled
6.7 K/kW
Anode side cooled
Rth(c-h)
Thermal resistance
case to heatsink
8.0 K/kW
Cathode side cooled
3.6 K/kW
Double side cooled
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