參數(shù)資料
型號: 5SDA08P2314
廠商: ABB SWITZERLAND LTD SEMICONDUCTORS
元件分類: 整流器
英文描述: 770 A, 2300 V, SILICON, RECTIFIER DIODE
封裝: P1, 1 PIN
文件頁數(shù): 3/3頁
文件大?。?/td> 46K
代理商: 5SDA08P2314
5SDA 08P26
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DA/127/04 Jul-10
3 of 3
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDA 08P26..
5SDA 08P23..
2 600
2 300
V
VRSM
Non-repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDA 08P26..
5SDA 08P23..
2 600
2 300
V
IFAVm
Average forward current
Tc = 85 °C
770
A
IFRMS
RMS forward current
Tc = 85 °C
1 209
A
IRRM
Repetitive reverse current
VR = VRRM
50
mA
tp = 8.3 ms
12 300
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
11 500
A
tp = 8.3 ms
626 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
661 000
A
2s
Tj = 45 °C
70
kW
PRSM
Maximum avalanche power
dissipation
tp = 20 s, single pulse
Tj = 160 °C
50
kW
Tjmin -Tjmax
Operating temperature range
-40 ÷ 160
°C
TSTG
Storage temperature range
-40 ÷ 160
°C
Unless otherwise specified Tj = 160 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
0.870
V
rT
Forward slope resistance
IF1 = 800 A, IF2 = 2 400 A
0.390
m
VFM
Maximum forward voltage
IFM = 1 800 A, Tj = 25 °C
1.500
V
Rthjc
Thermal resistance junction to case
60
K/kW
Unless otherwise specified Tj = 160 °C
Notes:
相關PDF資料
PDF描述
5SDA08P2624 770 A, 2600 V, SILICON, RECTIFIER DIODE
5SDA08P2234 770 A, 2300 V, SILICON, RECTIFIER DIODE
5SDA08P2614 770 A, 2600 V, SILICON, RECTIFIER DIODE
5SDA08P2324 770 A, 2300 V, SILICON, RECTIFIER DIODE
5SDA09P2013 850 A, 2000 V, SILICON, RECTIFIER DIODE
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