參數(shù)資料
型號(hào)： 5KP8-E3
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝： ROHS COMPLIANT, GLASS PACKEGE-2
文件頁(yè)數(shù)： 4/6頁(yè)
文件大小： 87K
代理商： 5KP8-E3
www.vishay.com
4
Document Number: 88308
Revision: 08-May-07
Vishay General Semiconductor
5KP5.0 thru 5KP188A
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
5KP5.0A-E3/54
2.776
54
800
13" Diameter Paper Tape & Reel
5KP5.0AHE3/54 (1)
2.776
54
800
13" Diameter Paper Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial
Junction Temperature
0.1 s
1.0 s
10 s
100 s
1 ms
10 ms
0.1
1.0
10
100
Non-repetitive pulse
waveform shown in
Fig. 3 TA = 25 °C
P
PPM
,P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td, Pulse Width
100
75
50
25
0
25
50
75
100
125
150
175
200
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
ercentage
,
%
TJ - Initial Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
td
0
1.0
2.0
3.0
4.0
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec.
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec. Waveform
as defined by R.E.A.
TJ = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
1
10
100
200
100
1000
10000
100000
C
J,
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-off Voltage (V)
Measured at
Zero Bias
Measured at Stand-off
Voltage VWM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
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參數(shù)描述
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5KP9.0A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 5KP9.0A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
5KP9.0A _AY _10001 制造商:PanJit Touch Screens 功能描述:
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5KP9.0A/4 制造商:Vishay Semiconductors 功能描述:Diode TVS Single Uni-Dir 9V 5KW 2-Pin Case P600 T/R
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