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參數(shù)資料
| 型號： | 5KP11A1 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE P600, 2 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 5KP11A1 |
5KP5.0 thru 5KP110A
Vishay Semiconductors
www.vishay.com
Document Number 88308
4
14-Jan-02
0
50
100
150
200
0
25
50
75
100
25
75
125
175
0.1
s 1.0s
10
s
100
s
1.0ms
10ms
0.1
1.0
10
100
1
10
100
200
100
1,000
10,000
100,000
1
10
100
200
300
400
500
450
350
250
0
25
50
75
100 125 150 175 200
0
6
8
4
2
Fig. 1 - Peak Pulse Power
Rating Curve
Fig. 5 - Steady State Power
Derating Curve
Fig. 6 - Maximum Non-repetitive Forward
Surge Current
Fig. 2 - Pulse Power Derating Curve
Fig. 4 - Typical Junction Capacitance
Non-repetitive pulse
waveform shown in
Fig. 3 TA = 25°C
td, Pulse Width
P
PPM
,Peak
Pulse
Power
(kW)
TL, Lead Temperature (°C)
P
PM(AV)
,Steady
State
Power
Dissipation
(W)
VWM — Reverse Stand-off Voltage (V)
C
J
,Junction
Capacitance
(pF)
Number of Cycles at 60 HZ
I FSM
,Peak
Forward
Surge
Current
(A)
TA - Ambient Temperature (°C)
TJ = 25°C
f = 1 MHz
Vsig = 50mVp-p
Measured at
Zero Bias
Measured at
Stand-off Voltage,
VWM
60 HZ
Resistive or Inductive Load
0.375" (9.5mm)
Lead Length
0.8 x 0.8 x 0.040" (20 x 20mm)
Copper Heat Sink
8.3ms Single Half Sine-Wave
(JEDEC Method)
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
Ratings and
Characteristic Curves (TA = 25OC unless otherwise noted)
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| 5KP11A-B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 5% RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP11A-E3/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 5KW 11V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP11A-E3/4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 5000W 11V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP11A-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 5000W 11V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 5KP11A-E3/54 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 5000W 11V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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