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參數(shù)資料
| 型號(hào)： | 5GWJZ47 |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 5 A, 40 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 235K |
| 代理商： | 5GWJZ47 |
5GWJZ47
2006-11-13
1
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
5GWJZ47
HIGH SPEED RECTIFIER APPLICATION
Repetitive Peak Reverse Voltage
: VRRM = 40 V
Average Forward Current
: IF (AV) = 5 A
Low Forward Voltage
: VFM = 0.55 V (Max.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
40
V
Average Forward Current
IF (AV)
5
A
50 (50Hz)
Peak One Cycle Surge Forward
Current (NonRepetitive)
IFSM
60 (60Hz)
A
Junction Temperature
Tj
40~125
°C
Storage Temperature Range
Tstg
40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 5A
―
0.55
V
Repetitive Peak Reverse Current
IRRM
VRRM = 40V
―
3.5
mA
Junction Capacitance
Cj
VR = 10V, f = 1MHz
200
―
pF
Thermal Resistance (With Heat Sink)
Rth (jc)
Junction to Case
(Note 1)
―
4.0
°C / W
Note 1: Apply silicone greace to the contact surface between heat sink and case of rectifier.
MARKING
Abbreviation Code
Part No.
5GWJZ47
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-10C3A
Weight: 2.0 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
5GWJZ47
Part No. (or abbreviation code)
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