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參數(shù)資料
| 型號(hào)： | 5962R9950402VZA |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運(yùn)算放大器 |
| 英文描述： | QUAD OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDSO14 |
| 封裝： | CERAMIC, SOIC-14 |
| 文件頁數(shù)： | 4/28頁 |
| 文件大?。?/td> | 921K |
| 代理商： | 5962R9950402VZA |
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Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax -
TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 40mA independent of the magnitude of V+. At values of supply voltage in excess of +15Vdc, continuous short-circuits can exceed the power
dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 4: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+ voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns
to a value greater than -0.3Vdc (at 25 C).
Note 5: Human body model, 1.5 k
in series with 100 pF.
Note 6: Guaranteed by Vio tests.
Note 7: Datalog reading in K=V/mV
Note 8: Guaranteed, not tested
Note 9: Calculated parameters
Note 10: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019
Note 11: Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate
sensitivity (ELDRS) effect.
Typical Performance Characteristics
Input Voltage Range
Input Current
20108034
20108035
Supply Current
Voltage Gain
20108036
20108037
LM124A/LM124QML
www.national.com
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