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| 型號： | 5962R005101QXA |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, MBCY3 |
| 封裝： | METAL CAN, TO-46, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 110K |
| 代理商： | 5962R005101QXA |
MNLM136A-2.5-X-RH REV 0E0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: (SEE NOTE 3)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
Iz = 1mA
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
Iadj
Adjust Current
Vadj = 0.7V
3
-125
+125
uA
1, 2,
3
Delta Z
Delta Zener
Voltage
400 uA < Z < 10mA
3
6
mV
1
3
10
mV
2, 3
Vz
Zener Voltage
Vadj = Open
3
2.465
2.515
V
1
3
2.44
2.54
V
2, 3
Vadj = 0.7V
3
2.39
2.49
V
1
3
2.29
2.49
V
2, 3
Vadj = 1.9V
3
2.49
2.69
V
1, 2,
3
Zrd
Reverse Dynamic
Impedance
1, 3
0.6
Ohm
1
1, 3
1
Ohm
2, 3
Vstab
Temp Stability
Vz = Adjusted to 2.490V
2, 3
18
mV
2, 3
DC PARAMETERS: DRIFT VALUES, (SEE NOTE 3)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
"Delta Calculation Performed on QMLV devices at Group B, Subgroup 5 ONLY"
Vz
Zener Voltage
Vadj = Open
3
-10
10
mV
1
Vadj = 0.7V
3
-10
10
mV
1
Vadj = 1.9V
3
-10
10
mV
1
Note 1:
Parameter tested go-no-go only.
Note 2:
Tested on Auto Drift Oven.
Note 3:
Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics. These parts may be dose rate sensitive in a space
environment and may demonstrate enhanced low dose rate effect. Radiation end point
limits for the noted parameters are guaranteed only for the conditions as spectified
in MIL-STD-883, Method 1019.5.
4
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