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FN4561.8
September 25, 2008
Die Characteristics
DIE DIMENSIONS
4710m x 3570m (185 mils x 140 mils)
Thickness: 483m ±25.4m (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
±1.0k
Top Metallization
Type: ALSiCu
Thickness: 16.0k
±2k
Substrate
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 105 A/cm2
Transistor Count
225
Metallization Mask Layout
HS-1825ARH
NOTES:
1. This is the oscillator ground (OSCGND) bond pad and must be
connected to GND.
2. PGND and VC each require two bond pad connections.
PGND (12)
OUTA (11)
GND (10)
OSCGND
ILIM (9)
SS (8)
RAMP (7)
CT (6)
RT (5)
(NOTE 1)
(1) IN-
(16) VREF
(15) VCC
(14) OUTB
(13) VC
(3) EAOUT
(4) CLK/LEB
(2) IN+
VC (13)
(NOTE 2)
(12) PGND
(NOTE 2)
HS-1825ARH