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參數(shù)資料
| 型號(hào)： | 5962F0324801QXC |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Radiation Hardened, 9A, Non-Inverting Power MOSFET Driver |
| 中文描述： | 9 A BUF OR INV BASED MOSFET DRIVER, CDFP16 |
| 封裝： | CERAMIC, DFP-16 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | 5962F0324801QXC |
2
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4191
m x 4826m (165 mils x 190 mils)
Thickness: 483
m ± 25.4m (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
± 1.0k
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
± 2k
Substrate:
Radiation Hardened Silicon Gate
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
40
Metallization Mask Layout
ISL74422BRH
(3) VS (IB)
(15, 16) VS (OB)
(13) +VOUT
(12) -VOUT
(8, 9) GND (OB)
(5) GND (IB)
(4) VIN
ISL74422BRH
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