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參數(shù)資料
| 型號(hào)： | 56DN06S01 |
| 元件分類： | 整流器 |
| 英文描述： | 8400 A, 600 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 225K |
| 代理商： | 56DN06S01 |
N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
56DN06S01
BIP AC / 08-10-2003 M.Droldner
A04/03
1/8
Seite/page
Kenndaten
Elektrische Eigenschaften
Thermische Eigenschaften
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Tvj = -40°C... Tvj max
VRRM
400
600
V
Stospitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
VRSM
450
650
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
tp
≥ 5ms
IFRMSM
13200 A
Dauergrenzstrom
average on-state current
TC = 111 °C
IFAVM
8400 A
Stostrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
IFSM
81000
70000
A
Grenzlastintegral
It-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
It
32800
24500
As*10
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
Tvj = Tvj max , iF = 8kA
vF
max.
0,96 V
Schleusenspannung
threshold voltage
Tvj = Tvj max
V(TO)
0,66 V
Ersatzwiderstand
slope resistance
Tvj = Tvj max
rT
0,036 m
Durchlakennlinie
on-state characteristic
T
i
D
)
1
i
(
Ln
C
i
B
A
v
+
+
+
=
Tvj = Tvj max
A=
B=
C=
D=
4,167E-01
1,807E-05
6,716E-03
3,782E-03
Sperrstrom
reverse current
Tvj = Tvj max , vR = VRRM
iR
max.
100 mA
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
Kühlflche / cooling surface
beidseitig / two-sided, θ = 180°sin
beidseitig / two-sided, DC
RthJC
max.
0,0058
0,0052
°C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
Kühlflche / cooling surface
beidseitig / two-sided
RthCH
max.
0,0025 °C/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
Tvj max
180 °C
Betriebstemperatur
operating temperature
Tc op
-40...+180 °C
Lagertemperatur
storage temperature
Tstg
-40...+180 °C
prepared by: M.Droldner
date of publication: 10.10.03
approved by: M.Leifeld
revision:
01
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