參數(shù)資料
型號(hào): 50WQ03FNTRLPBF
廠商: VISHAY SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: DIODE 30 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode
中文描述: Schottky (Diodes & Rectifiers) 5.5 Amp 30 Volt
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 91K
代理商: 50WQ03FNTRLPBF
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 94232
Revision: 07-Jul-10
50WQ03FNPbF
Vishay Semiconductors
Schottky Rectifier, 5.5 A
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop
See fig. 1
V
FM (1)
5 A
T
J
= 25 °C
0.46
V
10 A
0.53
5 A
T
J
= 125 °C
0.35
10 A
0.46
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
3
mA
58
Threshold voltage
V
F(TO)
r
t
C
T
L
S
T
J
= T
J
maximum
0.19
V
Forward slope resistance
22.22
m
Typical junction capacitance
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
590
pF
Typical series inductance
5.0
nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
SYMBOL
TEST CONDITIONS
VALUES
UNITS
T
J
(1)
, T
Stg
- 40 to 150
°C
R
thJC
DC operation
See fig. 4
3.0
°C/W
Approximate weight
0.3
g
0.01
oz.
Marking device
Case style D-PAK (similar to TO-252AA)
50WQ03FN
dP
dT
J
-------------
R
thJA
----1
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