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參數(shù)資料
| 型號(hào)： | 50N06L-X-TA3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET |
| 中文描述： | 五十○安培，60伏特N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | 50N06L-X-TA3-T |
50N06
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-088,A
2 of 8
ABS OLUT E MAX IMUM RAT INGS
PARAMETER
SYMBOL
V
DSS
V
GSS
RATINGS
60
±20
50
35
200
480
13
7
130
0.9
-55 ~ +150
-55 ~ +150
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
W/
Drain-Source Voltage
Gate to Source Voltage
T
C
= 25
T
C
= 100
Continuous Drain Current
I
D
Drain Current Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation (T
C
= 25
Derating Factor above 25
Operation Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
I
DM
E
AS
E
AR
dv/dt
)
P
D
T
J
T
STG
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JC
θ
CS
θ
JA
MIN
TYP
0.5
MAX
1.15
62.5
UNIT
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
ELECT RICAL CHARACT ERIS T ICS
T
C
= 25
unless otherwise specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BV
DSS
V
GS
= 0 V, I
D
= 250 μA
T
J
I
D
= 250 μA,
Referenced to 25
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, T
C
= 125
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
60
V
BV
DSS
/
0.07
V/
μA
μA
nA
nA
Drain-Source Leakage Current
I
DSS
1
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
100
-100
I
GSS
V
GS(TH)
V
DS
= V
GS
, I
D
= 250 μA
2.0
4.0
V
R
DS(ON)
V
GS
= 10 V, I
D
= 25 A
18
23
m
C
ISS
C
OSS
C
RSS
900
430
80
1220
550
100
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
40
100
90
80
30
9.6
10
60
200
180
160
40
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30V, I
D
=25 A,
R
G
= 50
(Note 4, 5)
V
DS
= 48V, V
GS
= 10 V
I
D
= 50A, (Note 4, 5)
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