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參數(shù)資料
| 型號(hào)： | 50N06 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET |
| 中文描述： | 五十○安培，60伏特N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | 50N06 |
50N06
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-088,A
3 of 8
ELECT RICAL CHARACT ERIS T ICS (Cont.)
PARAMETER
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
SD
I
S
= 50A, V
GS
= 0 V
Integral Reverse p-n Junction Diode in the
MOSFET
1.5
V
Continuous Source Current
I
S
50
Pulsed Source Current
I
SM
G
S
D
200
A
Reverse Recovery Time
Reverse Recovery Charge
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=5.6mH, I
AS
=50A, V
DD
=25V, R
G
=0
, Starting T
J
=25
3. I
SD
≤
50A, di/dt
≤
300A/μs, V
DD
≤
BV
DSS
, Starting T
J
=25
4. Pulse Test: Pulse Width
≤
300μs,Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
t
RR
Q
RR
54
81
ns
μC
I
S
= 50A, V
GS
= 0 V
dI
F
/ dt = 100 A/μs
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