參數(shù)資料
型號: 4N36
廠商: Texas Instruments, Inc.
英文描述: Optocoupler
中文描述: 光耦合器
文件頁數(shù): 6/8頁
文件大小: 157K
代理商: 4N36
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021A – NOVEMBER 1981 – REVISED DECEMBER 1996
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
APPLICATION INFORMATION
The devices consist of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor. Each
device is available in a 6-terminal plastic dual-in-line package shown in Figure 9, or in a DCJ plastic dual
surface-mount optocoupler package (see Mechanical Data).
C
L
C
0.021 (0,534)
0.015 (0,381)
6 Places
Seating Plane
L
0.300 (7,62) T.P.
(see Note A)
0.260 (6,61)
0.240 (6,09)
0.012 (0,305)
0.008 (0,203)
0.215 (5,46)
0.115 (2,92)
0.070 (1,78)
0.020 (0,51)
0.090 (2,29)
0.050 (1,27)
4 Places
0.040 (1,01) MIN
0.070 (1,78) MAX
6 Places
0.370 (9,40)
0.330 (8,38)
Index Dot
(see Note B)
105
°
90
°
1
2
3
6
5
4
(see Note C)
0.150 (3,81)
0.125 (3,17)
0.100 (2,54) T.P.
(see Note A)
NOTES: A. Leads are within 0.005 (0,13) radius of true position (T.P.) with maximum material condition and unit installed.
B. Terminal 1 identified by index dot.
C. Terminal connections:
1. Anode (part of the infrared-emitting diode)
2. Cathode (part of the infrared-emitting diode)
3. No internal connection
4. Emitter (part of the phototransistor)
5. Collector (part of the phototransistor)
6. Base (part of the phototransistor)
D. The dimensions given fall within JEDEC MO-001 AM dimensions.
E. All linear dimensions are in inches (millimeters).
Figure 9. Plastic Dual-in-Line Package
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