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參數(shù)資料
| 型號(hào)： | 4N35 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Optocoupler |
| 中文描述： | 光耦合器 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 157K |
| 代理商： | 4N35 |
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021A – NOVEMBER 1981 – REVISED DECEMBER 1996
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS
D Gallium-Arsenide-Diode Infrared Source
Optically Coupled to a Silicon npn
Phototransistor
D High Direct-Current Transfer Ratio
D High-Voltage Electrical Isolation
1.5-kV, 2.5-kV, or 3.55-kV Rating
D Plastic Dual-In-Line Package
D High-Speed Switching
tr = 7 s, tf = 7 s Typical
D Typical Applications Include Remote
Terminal Isolation, SCR and Triac Triggers,
Mechanical Relays and Pulse Transformers
absolute maximum ratings at 25
°C free-air temperature (unless otherwise noted)
Input-to-output peak voltage (8-ms half sine wave): 4N35
3.55 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N36
2.5 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N37
1.5 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35
2.5 kV
. . . . . . . . . . . . . . . . . . . . . . . . .
4N36
1.75 kV
. . . . . . . . . . . . . . . . . . . . . . . .
4N37
1.05 kV
. . . . . . . . . . . . . . . . . . . . . . . .
Collector-base voltage
70 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 1)
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-base voltage
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode reverse voltage
6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode forward current: Continuous
60 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (1
s, 300 pps)
3 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor continuous collector current
100 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) 25
°C free-air temperature:
Infrared-emitting diode (see Note 2)
100 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 3)
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous power dissipation at (or below) 25
°C lead temperature:
Infrared-emitting diode (see Note 4)
100 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 5)
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating temperature range, TA
–55
°C to 100°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–55
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
JEDEC registered data. This data sheet contains all applicable registered data in effect at the time of publication.
NOTES:
1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100
°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100
°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100
°C lead temperature at the rate of 1.33 mW/°C. Lead temperature is measured on the collector lead
0.8 mm (1/32 inch) from the case.
5. Derate linearly to 100
°C lead temperature at the rate of 6.7 mW/°C.
Copyright
1996, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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2
3
6
5
4
ANODE
CATHODE
NC
BASE
COLLECTOR
EMITTER
DCJ, 4N35, 4N36, OR 4N37 PACKAGE
(TOP VIEW)
NC – No internal connection
schematic
ANODE
CATHODE
NC
COLLECTOR
BASE
EMITTER
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