參數(shù)資料
型號: 4N28SM
英文描述: Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
中文描述: 光耦合器TRANSITOR ? /頁
文件頁數(shù): 1/7頁
文件大小: 101K
代理商: 4N28SM
The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
Solid State Relays
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
VR
IF
PD
3
Volts
Forward Current — Continuous
60
mA
LED Power Dissipation @ TA = 25
°
C
with Negligible Power in Output Detector
Derate above 25
°
C
120
1.41
mW
mW/
°
C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
VCEO
VECO
VCBO
IC
PD
30
Volts
Emitter–Collector Voltage
7
Volts
Collector–Base Voltage
70
Volts
Collector Current — Continuous
150
mA
Detector Power Dissipation @ TA = 25
°
C
with Negligible Power in Input LED
Derate above 25
°
C
150
1.76
mW
mW/
°
C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
250
2.94
mW
mW/
°
C
Ambient Operating Temperature Range
TA
Tstg
TL
–55 to +100
°
C
Storage Temperature Range
–55 to +150
°
C
Soldering Temperature (10 sec, 1/16
from case)
260
°
C
Order this document
by 4N25/D
GlobalOptoisolator
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1
2
3
6
5
4
STANDARD THRU HOLE
6
1
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
4N25
4N26
4N27
4N28
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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