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參數(shù)資料
| 型號(hào)： | 4N25FR2VM |
| 英文描述： | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 中文描述： | 光耦合器 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | 4N25FR2VM |
The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
Solid State Relays
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
VR
IF
PD
3
Volts
Forward Current — Continuous
60
mA
LED Power Dissipation @ TA = 25
°
C
with Negligible Power in Output Detector
Derate above 25
°
C
120
1.41
mW
mW/
°
C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
VCEO
VECO
VCBO
IC
PD
30
Volts
Emitter–Collector Voltage
7
Volts
Collector–Base Voltage
70
Volts
Collector Current — Continuous
150
mA
Detector Power Dissipation @ TA = 25
°
C
with Negligible Power in Input LED
Derate above 25
°
C
150
1.76
mW
mW/
°
C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
250
2.94
mW
mW/
°
C
Ambient Operating Temperature Range
TA
Tstg
TL
–55 to +100
°
C
Storage Temperature Range
–55 to +150
°
C
Soldering Temperature (10 sec, 1/16
″
from case)
260
°
C
Order this document
by 4N25/D
GlobalOptoisolator
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1
2
3
6
5
4
STANDARD THRU HOLE
6
1
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
4N25
4N26
4N27
4N28
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4N25SM | OPTOCOUPLER |
| 4N25SR2VM | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 4N26FR2VM | OPTOCOUPLER |
| 4N26SR2M | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 4N26TM | OPTOCOUPLER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4N25FVM | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N25GV | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR >20% RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N25GVS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN-OUTPUT DC-INPUT OPTOCOUPLER |
| 4N25GVSERIES | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler with Phototransistor Output |
| 4N25M | 功能描述:晶體管輸出光電耦合器 Optocoupler (white) Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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