
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E.Walnut Str., Garland, TX 75040
(972)272-3571
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
4N22U
4N23U
JAN, JANTX, JANTXV,
OPTOCOUPLERS
4N24U
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Base lead provided for conventional transistor
biasing
Overall current gain...1.5 typical (4N24U)
High gain, high voltage transistor
Miniature package saves circuit board area
High voltage electrical isolation…1KV rating
Applications:
Line Receivers
Switchmode Power Supplies
Signal ground isolation
Process Control input/output isolation
DESCRIPTION
Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor in a 6-pin
leadless chip carrier. The
4N22U
,
4N23U
and
4N24U
optocouplers can be supplied to customer specifications as well as
JAN, JANS, JANTX, and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage........................................................................................................................................................
±
1kV
Collector-Base Voltage ...........................................................................................................................................................35V
Collector-Emitter Voltage (See Note 1) ..................................................................................................................................35V
Emitter-Base Voltage................................................................................................................................................................4V
Input Diode Reverse Voltage....................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 2).....................................40mA
Continuous Collector Current...............................................................................................................................................50mA
Peak Diode Current (See Note 3).............................................................................................................................................1A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 4)................................300mW
Operating Free-Air Temperature Range............................................................................................................-55°C to +125°C
Storage Temperature.........................................................................................................................................-65°C to +125°C
Lead Temperature (1/16” (1.6mm) from case for 10 seconds)..........................................................................................240°C
Notes:
1. This value applies with the emitter-base diode open-circuited and the input-diode current equal to zero.
2. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C.
3. This value applies for t
w
≤
1us. PRR<300 pps.
4. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
* JEDEC registered data
Package Dimensions Schematic Diagram
.240 (6.10)
.250 (6.35)
.165 (4.19)
.175 (4.44)
PIN 1
IDENTIFIER
2
1
6
5
4
3
.045 (1.14)
.055 (1.39)
.095 (2.41)
.105 (2.67)
.082 (2.08)
.098 (2.49)
3
E
B
K
6
4
5
C
A
1
.066 (1.68)
.080 (2.03)
.028 (0.71)
.022 (0.56)
.060 (1.52)
.070 (1.78)
5 PL