參數(shù)資料
型號(hào)： 452QS16GE
廠商： 美國(guó)訊泰微波有限公司上海代表處
英文描述： InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
中文描述： 1瓦的InGaP HBT功率放大器，0.4 - 2.2吉赫
文件頁(yè)數(shù)： 1/22頁(yè)
文件大?。?/td> 1056K
代理商： 452QS16GE
A
5
5 - 252
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC452QS16G
/
452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
General Description
Features
Functional Diagram
The HMC452QS16G & HMC452QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged
in a miniature 16 lead QSOP plastic package, the
amplifier gain is typically 22.5 dB at 0.4 GHz and 9
dB at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +43 dBm at 0.4 GHz
or +48 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC452QS16G & HMC452QS16GE ideal power
amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed
Wireless applications.
Output IP3: +48 dBm
22.5 dB Gain @ 400 MHz
9 dB Gain @ 2100 MHz
53% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm
2
Electrical Specifications,
T
A
= +25°C, Vs= +5V, VPD = +5V
[1]
Typical Applications
The HMC452QS16G / HMC452QS16GE is ideal for
applications requiring a high dynamic range amplifier:
GSM, GPRS & EDGE
CDMA & W-CDMA
CATV/Cable Modem
Fixed Wireless & WLL
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
400 - 410
450 - 496
810 - 960
1710 - 1990
2010 - 2170
MHz
Gain
20
22.5
19
21.5
13
15.5
7.5
10
6.5
9
dB
Gain Variation Over
Temperature
0.012
0.02
0.012
0.02
0.012
0.02
0.012
0.02
0.012
0.02
dB/C
Input Return Loss
13
15
9
17
11
dB
Output Return Loss
7
8
12
15
20
dB
Output Power for 1dB
Compression (P1dB)
27.5
30.5
27.5
30.5
27
30
28
31
28
31
dBm
Saturated Output
Power (Psat)
31
31
31
31.5
32.5
dBm
Output Third Order
Intercept (IP3) [2]
40
43
41
44
45
48
45
48
45
48
dBm
Noise Figure
7
7
7
7
7.5
dB
Supply Current (Icq)
485
485
485
485
485
mA
Control Current (IPD)
10
10
10
10
10
mA
[1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
相關(guān)PDF資料
PDF描述
452
453584 SOLDER 60/40 EN29453 362 1.00MM 250G
453QS16GE InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
4545SS-7.5 SCISSORS HOUSEHOLD
1820CP-6.5 SCISSORS GENERAL PURPOSE
相關(guān)代理商/技術(shù)參數(shù)
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452-SS-20 制造商:RAF Electronic Hardware 功能描述:
452ST89E 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
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