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參數(shù)資料
| 型號： | 42S16800A |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數(shù)： | 19/22頁 |
| 文件大?。?/td> | 540K |
| 代理商： | 42S16800A |
ISSI
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00C
01/20/05
IS42S81600A, IS42S16800A, IS42S32400A
PIN FUNCTIONS
Symbol
Type
Function (In Detail)
A0-A11
Input Pin
Address Inputs: A0-A11 are sampled during the ACTIVE
command (row-address A0-A11) and READ/WRITE command (A0-A9 (x8); A0-A8
(x16); A0-A7(x32) with A10 defining auto precharge) to select one location out of the
memory array in the respective bank. A10 is sampled during a PRECHARGE command
to determine if all banks are to be precharged (A10 HIGH) or bank selected by
BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD MODE
REGISTER command.
BA0, BA1
Input Pin
Bank Select Address: BA0 and BA1 defines which bank the ACTIVE, READ, WRITE or
PRECHARGE command is being applied.
CAS
Input Pin
CAS, in conjunction with the RAS and WE, forms the device command. See the
"Command Truth Table" for details on device commands.
CKE
Input Pin
The CKE input determines whether the CLK input is enabled. The next rising edge of the
CLK signal will be valid when is CKE HIGH and invalid when LOW. When CKE is LOW,
the device will be in either power-down mode, clock suspend mode, or self refresh
mode. CKE is an asynchronous input.
CLK
Input Pin
CLK is the master clock input for this device. Except for CKE, all inputs to this device
are acquired in synchronization with the rising edge of this pin.
CS
Input Pin
The
CS input determines whether command input is enabled within the device.
Command input is enabled when
CS is LOW, and disabled with CS is HIGH. The device
remains in the previous state when
CS is HIGH.
DQML,
Input Pin
DQML and DQMH control the lower and upper bytes of the I/O buffers. In read
DQMH
mode,DQML and DQMH control the output buffer. WhenDQML orDQMH is LOW, the
corresponding buffer byte is enabled, and when HIGH, disabled. The outputs go to the
HIGH impedance state whenDQML/DQMH is HIGH. This function corresponds to
OE
in conventional DRAMs. In write mode,DQML and DQMH control the input buffer.
WhenDQML or DQMH is LOW, the corresponding buffer byte is enabled, and data can
be written to the device. WhenDQML or DQMH is HIGH, input data is masked and
cannot be written to the device.
DQM0-DQM3
Input Pin
For IS42S32400A only
DQM
Input Pin
For IS42S81600A only.
RAS
Input Pin
RAS, in conjunction with CAS and WE, forms the device command. See the "Command
Truth Table" item for details on device commands.
WE
Input Pin
WE, in conjunction with RAS and CAS, forms the device command. See the "Command
Truth Table" item for details on device commands.
VDDQ
Power Supply Pin
VDDQ is the output buffer power supply.
VDD
Power Supply Pin
VDD is the device internal power supply.
VSSQ
Power Supply Pin
VSSQ is the output buffer ground.
VSS
Power Supply Pin
VSS is the device internal ground.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 42S32200 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 4300-000 | EMI/RFI FILTER Hermetically Sealed |
| 4300-000LF | |
| 4300-001 | EMI/RFI FILTER Hermetically Sealed |
| 4300-001LF | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 42S16800L | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A60 | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A70 | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S17800L | 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
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