參數(shù)資料
型號(hào)： 41LV16100B
廠(chǎng)商： Integrated Silicon Solution, Inc.
英文描述： 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述： 100萬(wàn)× 16（16兆）動(dòng)態(tài)與江戶(hù)頁(yè)面模式內(nèi)存
文件頁(yè)數(shù)： 18/22頁(yè)
文件大?。?/td> 152K
代理商： 41LV16100B
IS41LV16100B
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. B
04/13/05
ISSI
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
3.3V
–0.5 to +4.6
V
VDD
Supply Voltage
3.3V
–0.5 to +4.6
V
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Commercial Operation Temperature
0 to +70
°C
Industrial Operation Temperature
-40 to +85
°C
TSTG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
3.3V
3.0
3.3
3.6
V
VIH
Input High Voltage
3.3V
2.0
—
VDD + 0.3
V
VIL
Input Low Voltage
3.3V
–0.3
—
0.8
V
TA
Commercial Ambient Temperature
0
—
70
°C
Industrial Ambient Temperature
–40
—
85
°C
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN1
Input Capacitance: A0-A9
5
pF
CIN2
Input Capacitance:
RAS, UCAS, LCAS, WE, OE
7pF
CIO
Data Input/Output Capacitance: I/O0-I/O15
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
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