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參數(shù)資料
| 型號(hào)： | 4126-T60-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS |
| 中文描述： | 200 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | 4126-T60-T |
4126
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R204-021,B
2
ABS OLUAT E MAX IUM RAT INGS
(Tc = 25
℃
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
RATINGS
400
200
7
3
40
150
-40 ~ +150
UNIT
V
V
V
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
ELECT RICAL CHARACT ERIS T ICS
(Ta= 25
℃
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
C
=10mA, I
B
=0
MIN
TYP
MAX
UNIT
Collector-Emitter Maintenance
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
V
CEO (SUS)
200
V
V
(BR) CBO
V
(BR) EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
I
C
=1mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=400V, I
E
=0
V
CE
=200V, I
B
=0
V
EB
=7V, Ic=0
V
CE
=10V, Ic=0.5A
V
CE
=5V, Ic=3A
I
C
=0.5A, I
B
=0.1A
I
C
=2A, I
B
=0.5A
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B1
= -I
B2
=
0.2A
I
C
=1A, I
B1
= -I
B2
=
0.2A
V
CE
=10V, Ic=0.1A
400
7
10
5
4
V
V
μA
μA
μA
V
V
V
μs
μs
MHz
100
100
100
60
40
0.5
1.5
1.2
0.7
4
DC Current Gain
Collector-Emitter Saturation Voltage
V
CE (sat)
Base-Emitter Saturation Voltage
Fall Time
Storage Time
Feature Frequency
V
BE (sat)
tf
ts
f
T
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