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參數(shù)資料
| 型號(hào)： | 3SK309 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | GaAs N Channel Dual Gate MES FET UHF RF Amplifier |
| 中文描述： | 砷化鎵?頻道雙柵場(chǎng)效應(yīng)晶體管超高頻射頻放大器 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 3SK309 |
3SK309
3
Main Characteristics
200
150
100
50
0
50
100
150
200
C
Ambient Temperature Ta (
°
C)
Maximum Channel Power
Dissipation Curve
20
16
12
8
4
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
D
D
V
G1S
= –1 V
–0.4 V
–0.5 V
–0.6 V
–0.7 V
–0.8 V
–0.9 V
Pulse Test
Typical Output Characteristics
20
16
12
8
4
0
–2.0
–1.6
–1.2
–0.8
–0.4
0
Gate1 to Source Voltage V
G1S
(V)
D
D
0 V
–0.4 V
V
DS
= 3 V
–0.6 V
V
G2S
= –1 V
–0.8 V
–0.2 V
Drain Current vs.
Gate1 to Source Voltage
20
16
12
8
4
–1.6
–1.2
–0.8
–0.4
0
Gate2 to Source Voltage V
G2S
(V)
D
D
–2.0
0
0 V
–0.4 V
–0.6 V
V
DS
= 3 V
V
G1S
= –1 V
–0.8 V
–0.2 V
Drain Current vs.
Gate2 to Source Voltage
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3SK317 | Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK318 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK319 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK320 | N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX) |
| 3SK321 | Silicon N-Channel Dual Gate MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK317 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK317ZR(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 3SK317ZR-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK318 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK318YB(TL) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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