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參數(shù)資料
| 型號(hào)： | 3SK296 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 50K |
| 代理商： | 3SK296 |
3SK296
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
V
G2S
I
D
Pch
12
V
Gate 1 to source voltage
±
8
±
8
V
Gate 2 to source voltage
V
Drain current
25
mA
Channel power dissipation
100
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
12
—
—
V
I
D
= 200
μ
A , V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
=
±
10
μ
A, V
G2S
= V
DS
= 0
Gate 1 to source breakdown
voltage
V
(BR)G1SS
±
8
—
—
V
Gate 2 to source breakdown
voltage
V
(BR) G2SS
±
8
—
—
V
I
G2
=
±
10
μ
A, V
G1S
= V
DS
= 0
Gate 1 cutoff current
I
G1SS
I
G2SS
I
DS(on)
—
—
±
100
±
100
nA
V
G1S
=
±
6 V, V
G2S
= V
DS
= 0
V
G2S
=
±
6 V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G1S
= 0.5V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3V,
I
D
μ
A
V
DS
= 10 V, V
G1S
= 3V,
I
D
μ
A
V
DS
= 6 V, V
G2S
= 3V,
I
D
V
DS
= 6 V, V
G2S
= 3V,
I
D
Gate 2 cutoff current
—
—
nA
Drain current
0.5
—
10
mA
Gate 1 to source cutoff voltage V
G1S(off)
–0.5
—
+0.5
V
Gate 2 to source cutoff voltage V
G2S(off)
0
—
+1.0
V
Forward transfer admittance
|y
fs
|
16
20.8
—
mS
Input capacitance
Ciss
1.2
1.5
2.2
pF
Output capacitance
Coss
0.6
0.9
1.2
pF
Reverse transfer capacitance
Crss
—
0.01
0.03
pF
Power gain
PG
16
19.5
—
dB
V
DS
= 4 V, V
G2S
= 3V,
I
D
Noise figure
Note:
NF
—
2.0
3
dB
Marking is “ZQ–”
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| 3SK296ZQ-TL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
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| 3SK298ZP-TL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET |
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