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參數(shù)資料
| 型號： | 3SK239A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | GaAs Dual Gate MES FET |
| 中文描述： | 砷化鎵雙柵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 3SK239A |
3SK239A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
V
G2S
I
D
Pch
12
V
Gate 1 to source voltage
–6
V
Gate 2 to source voltage
–6
V
Drain current
50
mA
Channel power dissipation
100
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
–55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source leakage current I
DSX
—
—
50
μA
V
DS
= 12 V, V
G1S
= –3 V,
V
G2S
= 0
I
G1
= –10 μA, V
G2S
= V
DS
= 0
Gate 1 to source breakdown
voltage
V
(BR)G1SS
–6
—
—
V
Gate 2 to source breakdown
voltage
V
(BR)G2SS
–6
—
—
V
I
G2
= –10 μA, V
G1S
= V
DS
= 0
Gate 1 leakage current
I
G1SS
I
G2SS
I
DSS
—
—
–5
μA
V
G1S
= –5 V, V
G2S
= V
DS
= 0
V
G2S
= –5 V, V
G1S
= V
DS
= 0
V
DS
= 5 V, V
G1S
= V
G2S
= 0
V
DS
= 5 V, V
G2S
= 0,
I
D
V
DS
= 5 V, V
G1S
= 0,
I
D
V
DS
= 5 V, V
G2S
= 1 V,
I
D
V
= 5 V, V
G1S
= V
G2S
= –3 V,
f = 1 MHz
Gate 2 leakage current
—
—
–5
μA
Drain current
14
19
28
mA
Gate 1 to source cutoff voltage V
G1S(off)
—
–1.2
–1.6
V
Gate 2 to source cutoff voltage V
G2S(off)
—
–1.2
–1.6
V
Forward transfer admittance
|y
fs
|
20
31
—
mS
Input capacitance
Ciss
—
0.58
1.0
pF
Output capacitance
Coss
—
0.36
0.6
pF
Reverse transfer capacitance
Crss
—
0.028
0.05
pF
Power gain
PG
17
19
—
dB
V
DS
= 5 V, V
G2S
= 1 V,
I
D
Noise figure
Note:
NF
—
1.3
2.0
dB
Marking is “XR–”.
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| 3SK239L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 3SK240 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) |
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| 3SK242 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 25MA I(D) | SOT-343R |
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