參數(shù)資料
型號: 3SK177
廠商: NEC Corp.
英文描述: RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD
中文描述: 射頻放大器。超高頻電視調(diào)諧器的N溝道砷化鎵雙柵MES的場效應(yīng)晶體管4針微型模具
文件頁數(shù): 2/6頁
文件大?。?/td> 59K
代理商: 3SK177
3SK177
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
30
20
10
0
–1.0
0
+1.0
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
G2S
= 1.0 V
0.5 V
0 V
–0.5 V
V
DS
= 5 V
V
G1S
– Gate 1 to Source Voltage – V
I
D
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 5 V
f = 1 kHz
V
G2S
= 1.0 V
V
G2S
= 0.5 V
0
10
20
30
I
D
– Drain Current – mA
30
20
10
y
f
FOWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
V
DS
= 5 V
V
G2S
= 1 V
at I
D
= 10 mA
f = 900 MHz
–3.0
–2.0
V
G2S
– Gate 2 to Source Voltage – V
+1.0
+2.0
30
15
–30
–45
G
P
0
–15
–1.0
0
G
PS
NF
N
10
5
0
300
100
0
75
125
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
– Ambient Temperature – C
P
T
100
50
25
200
400
30
20
10
0
–1.0
0
+1.0
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
G2S
= 1.0 V
0.5 V
0 V
V
DS
= 5 V
f = 1 kHz
V
G1S
– Gate 1 to Source Voltage – V
y
f
–0.5 V
2.0
1.0
0
–1.0
0
+1.0
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
DS
= 5 V
f = 1 MHz
V
G2S
– Gate 2 to Source Voltage – V
C
i
V
G2S
= 1 V at I
D
= 5 mA
V
G2S
= 1 V at I
D
= 10 mA
相關(guān)PDF資料
PDF描述
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