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參數(shù)資料
| 型號(hào)： | 3P4MH |
| 廠商： | NEC Corp. |
| 英文描述： | THYRISTORS |
| 中文描述： | 晶閘管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | 3P4MH |
2002
Document No. D13533EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
THYRISTORS
3P4MH, 3P6MH
3 A MOLD SCR
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 3P4MH and 3P6MH are P-gate fully diffused mold
SCRs with an average on-current of 3 A. The repeat peak off-
voltages (and reverse voltages) are 400 V and 600 V.
FEATURES
This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
3P4MH
500
500
400
400
3P6MH
700
700
600
600
Ratings
V
V
V
V
A
A
A
Unit
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Effective on-state current
Surge on-state current
R
GK
= 1 k
R
GK
= 1 k
R
GK
= 1 k
R
GK
= 1 k
Refer to Figure 11.
Refer to Figure 2.
3 (Tc = 87
°
C, Single half-wave,
θ
= 180
°
)
4.7
65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
20 (1 ms
≤
t
≤
10 ms)
50
2 (f
≥
50 Hz, Duty
≤
10%)
0.2
1 (f
≥
50 Hz, Duty
≤
10%)
6
40 to +125
55 tp +150
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
∫
i
t
2
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
A
A/
μ
s
W
W
A
V
°
C
°
C
2
s
Refer to Figure 3.
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
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