參數(shù)資料
型號(hào)： 3N100E
廠商： Motorola, Inc.
英文描述： TMOS POWER FET 3.0 AMPERES 1000 VOLTS
中文描述： TMOS是功率場效應(yīng)晶體管3.0安培1000伏特
文件頁數(shù)： 6/10頁
文件大小： 262K
代理商： 3N100E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (
°
C)
Figure 15. D2PAK Power Derating Curve
P
R
JA = 50
°
C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈
450 mils x 350 mils
0.1
1.0
1000
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
100
10
10
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
I
0.1
t, TIME (ms)
Figure 13. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
25
150
0
1.0E–05
1.0E–04
1.0E–02
0.1
1.0
0.01
1.0E–03
1.0E–01
1.0E+00
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
1.0E+01
250
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
50
100
125
75
50
200
150
100
ID = 3 A
1.0
dc
100
μ
s
10
μ
s
1 ms
10 ms
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