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參數(shù)資料
| 型號： | 3MBI150UC-120 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | IGBT Module U-Series 1200V / 150A 3 in one-package |
| 中文描述： | IGBT模塊U系列1200伏/ 150A在一個3級封裝 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 136K |
| 代理商： | 3MBI150UC-120 |
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
3MBI150UC-120
VGE=0V, f= 1MHz, Tj= 25°C
Vcc=600V, Ic=150A, Tj= 25°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
100
200
300
400
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
100
200
300
400
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
100
200
300
400
0
1
2
3
4
C
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=300A
Ic=150A
Ic= 75A
0.1
1.0
10.0
100.0
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
200
400
600
800
C
G
Gate charge : Qg [ nC ]
0
VGE
VCE
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