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參數(shù)資料
| 型號(hào)： | 3MBI150U-120 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | IGBT Module U-Series 1200V / 150A 3 in one-package |
| 中文描述： | IGBT模塊U系列1200伏/ 150A在一個(gè)3級(jí)封裝 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 126K |
| 代理商： | 3MBI150U-120 |
IGBT Module
3MBI150U-120
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 2.2
,Tj <= 125°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2
, Tj= 25°C
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2
, Tj=125°C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2
Switching loss vs. Gate resistance (typ.)
10
100
1000
10000
0
50
Collector current : Ic [ A ]
100
150
200
250
300
S
ton
toff
tr
tf
10
100
1000
10000
0
50
100
150
200
250
300
S
Collector current : Ic [ A ]
toff
ton
tr
tf
10
100
1000
10000
0.1
1.0
10.0
100.0
1000.0
S
Gate resistance : Rg [
]
tr
tf
toff
ton
0
5
10
15
20
25
30
0
100
200
300
S
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
25
50
75
100
125
0.1
1.0
10.0
100.0
1000.0
S
Gate resistance : Rg [
]
Eoff
Err
Eon
0
100
200
300
400
0
400
800
1200
C
Collector - Emitter voltage : VCE [ V ]
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