參數(shù)資料
型號: 3LN03M
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Silicon MOSFET General-Purpose Switching Device
中文描述: N溝道MOSFET的硅通用開關(guān)設(shè)備
文件頁數(shù): 2/4頁
文件大?。?/td> 50K
代理商: 3LN03M
3LN03M
No.8153-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
IS=350mA, VGS=0
8
ns
ns
ns
ns
nC
nC
nC
V
4.5
11
6
1
0.4
0.2
0.88
1.2
Package Dimensions
unit : mm
2158A
Switching Time Test Circuit
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
0.650.65
2.0
0.9
0.6
0.3
1
2
3
2
1
0
0
0
0.3
0.15
0 to 0.1
PW=10
μ
s
D.C.
1%
P.G
50
G
S
D
ID=180mA
RL=83
VDD=15V
VOUT
3LN03M
VIN
4V
0V
VIN
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT07512
Ambient Temperature, Ta --
°
C
RDS(on) -- Ta
IT08161
Drain-to-Source Voltage, VDS -- V
ID -- VDS
D
IT07510
Gate-to-Source Voltage, VGS -- V
ID -- VGS
D
IT07511
0.1
1.0
0
1.0
0
0.5
0
0.2
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.1
0.2
0.3
0.4
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
T 2
°
C
-5
°
C
2
°
C
2
°
C
T=5
°
C
7
°
C
VDS=10V
2.0
3.0
4.0
5.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Ta=25
°
C
ID=90mA
180mA
--40
--60
--20
0
20
40
60
80
100
120
140
0.2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
S
O
S
O
6
4V
3V
0
2V
20V
VGS=1.5V
ID=90mA, VGS=2.5V
ID=180mA, VGS=4.0V
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