參數(shù)資料
型號: 3LN02SP
廠商: Sanyo Electric Co.,Ltd.
元件分類: MOSFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù): 2/4頁
文件大?。?/td> 28K
代理商: 3LN02SP
3LN02SP
No.6550-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=150mA, VGS=4V
ID=80mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
IS=300mA, VGS=0
0.9
1.2
2.6
30
15
10
32
110
250
160
2.34
0.38
0.45
0.8
1.2
1.7
5.2
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Static Drain-to-Sourse on-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ”Miller” Charge
Diode Forward Voltage
1.2
Switching Time Test Circuit
PW=10
μ
s
D.C.
1%
4V
0V
VIN
P.G
50
G
D
ID=150mA
RL=100
VDD=15V
VOUT
3LN02SP
VIN
S
S
O
S
O
0
0
0.1
0.05
0.2
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
0.15
0.10
0.3
0.20
0.4
0.25
0.30
0.5
0.6
0.7
0.8
0.9
1.0
ID -- VDS
D
VGS=1.5V
20V
2V
6V
4.0V
3.5V
3.0V
0
0
0.5
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
1.0
1.5
2.0
0.3
0.2
0.1
0.6
0.5
0.4
2.5
ID -- VGS
VDS=10V
0
0
1
0.5
2
Gate-to-Source Voltage, VGS -- V
1.0
3
1.5
4
2.0
5
2.5
6
3.0
7
8
9
10
Ta=25
°
C
80mA
0.01
0.1
1.0
0.1
2
3
5
7
2
3
5
7
10
7
5
3
2
7
5
3
2
1.0
VGS=4V
Drain Current, ID -- A
D
ID=150mA
Ta=75
°
C
25
°
C
--25
°
C
7
°
C
T 5
°
C
IT00224
IT00225
IT00226
IT00227
2
°
C
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