參數(shù)資料
型號(hào): 3HN04MH
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Silicon MOSFET General-Purpose Switching Device
中文描述: N溝道MOSFET的硅通用開(kāi)關(guān)設(shè)備
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 45K
代理商: 3HN04MH
3HN04MH
No.8643-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
Qgs
Qgd
VSD
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
IS=300mA, VGS=0V
1.68
0.54
0.12
0.86
nC
nC
nC
V
1.2
Package Dimensions
unit : mm
7019A-003
Switching Time Test Circuit
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0
0
0
2
1
2.0
0.65
0.3
0
0.15
1
2
3
0 to 0.02
PW=10
μ
s
D.C.
1%
P.G
50
G
S
D
ID=300mA
RL=50
Rg
VDD=15V
VOUT
3HN04MH
VIN
10V
0V
VIN
Rg=1.2k
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
D
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
S
O
Gate-to-Source Voltage, VGS -- V
S
O
Ambient Temperature, Ta --
°
C
0.05
0.30
0.10
0.15
0.20
0.25
0
0
0.10
0.05
0.20
0.15
0.25
0.30
0
1.0
0.8
0.6
0.1
0.2
0.4
0.9
0.7
0.3
0.5
IT10821
0
1.0
0.5
2.0
3.0
4.0
1.5
2.5
3.5
4.5
IT10822
IT10824
0
2
4
6
8
16
10
12
14
IT10823
3.0
0
1.0
0.5
1.5
2.0
2.5
T=5
°
C
2
°
C
-5
°
C
Ta=25
°
C
VGS=3V
VDS=10V
1
5
4V
--60
0
2.0
2.5
1.0
1.5
0.5
3.0
--40
--20
0
20
40
60
80
100
120
140
160
ID=80mA, VGS=4V
I
D
=150mA, V
GS
=10V
1
6
7
ID=80mA
150mA
D
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