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參數(shù)資料
| 型號： | 3DD13002 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TRANSISTOR(NPN) |
| 中文描述： | 晶體管（NPN）的 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 51K |
| 代理商： | 3DD13002 |
MACROBIZES
CO., LTD
.
TO-251 Plastic-Encapsulate Transistors
3DD13002
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
1.25 W (Tamb=25
℃
)
Collector current
I
CM:
1 A
Collector-base voltage
V
(BR)CBO
: 600 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
μ
A, I
E
=0
600
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic=1mA, I
B
=0
400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
μ
A, I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
= 600V, I
E
=0
100
μ
A
Emitter cut-off current
I
EBO
V
EB
= 6V, I
C
=0
100
μ
A
h
FE(1)
V
CE
= 10V, I
C
= 200 mA
9
40
DC current gain
h
FE(2)
V
CE
= 10V, I
C
=250
μ
A
5
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=200mA, I
B
= 40 mA
0.8
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=200mA, I
B
= 40 mA
1.1
V
Transition frequency
f
T
V
CE
=10V, Ic=100mA
f =1MHz
5
MHz
Fall time
t
f
0.5
μ
s
Storage time
t
s
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
2.5
μ
s
CLASSIFICATION OF h
FE
(2)
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40
1 2 3
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 3DD13002B | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR (NPN) |
| 3DD13002B1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3DD13002 B1硅NPN型功率開關(guān)晶體管 |
| 3DD13002B-TO-92 | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR (NPN) |
| 3DD13002C1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3DD13002 C1硅NPN型功率開關(guān)晶體管 |
| 3DD13002E | 制造商:JSMC 制造商全稱:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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