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參數(shù)資料
| 型號： | 39SF020 |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 64兆位（x16）的多功能閃存 |
| 文件頁數(shù)： | 9/23頁 |
| 文件大?。?/td> | 231K |
| 代理商： | 39SF020 |
9
1998 Silicon Storage Technology, Inc.
326-10 12/98
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
AC CHARACTERISTICS
T
ABLE
9: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
CC
= 4.5-5.5V
SST39SF020-70 SST39SF020-90
Min
Max
70
70
70
35
0
0
15
15
0
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ(1)
T
OLZ(1)
T
CHZ(1)
T
OHZ(1)
T
OH(1)
Parameter
Read Cycle time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
Min
90
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
90
90
45
0
0
20
20
0
326 PGM T9.2
T
ABLE
10: P
ROGRAM
/E
RASE
C
YCLE
T
IMING
P
ARAMETERS
Symbol
Parameter
T
BP
Byte Program time
T
AS
Address Setup Time
T
AH
Address Hold Time
T
CS
WE# and CE# Setup Time
T
CH
WE# and CE# Hold Time
T
OES
OE# High Setup Time
T
OEH
OE# High Hold Time
T
CP
CE# Pulse Width
T
WP
WE# Pulse Width
T
WPH (1)
WE# Pulse Width High
T
CPH (1)
CE# Pulse Width High
T
DS
Data Setup Time
T
DH (1)
Data Hold Time
T
IDA (1)
Software ID Access and Exit Time
T
SE
Sector Erase
T
SCE
Chip Erase
Min
Max
30
Units
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
0
30
0
0
0
0
40
40
30
30
30
0
150
10
20
Note:
(1)
This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
326 PGM T10.4
Note: C
L
= 100 pF for 90 ns, C
L
= 30 pF for 70 ns
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