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參數(shù)資料
| 型號(hào)： | 33C408RTFI-30 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | SRAM |
| 英文描述： | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 30 ns, DFP32 |
| 封裝： | DFP-32 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 241K |
| 代理商： | 33C408RTFI-30 |
1
M
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301 - wwwmaxwell.com
4 Megabit (512K x 8-Bit)
CMOS SRAM
33C408
2002 Maxwell Technologies
All rights reserved.
04.16.02 REV 8
F
EATURES
:
R
AD
-P
AK
Technology radiation-hardened
against natural space radiation
524,288 x 8 bit organization
· Total dose hardness:
- > 100 krad (Si), depending upon space mis-
sion
Excellent Single Event Effect
·
- SEL
TH
: > 68 MeV/mg/cm
2
· - SEU
TH
: = 3 MeV/mg/cm
2
- SEU saturated cross section: 6E-9 cm
2
/bit
Package:
- 32-Pin R
AD
-P
AK
flat pack
- 32-Pin Non-R
AD
-P
AK
flat pack
Fast access time:
- 20, 25, 30 ns maximum times available
Single 5V + 10% power supply
Fully static operation
- No clock or refresh required
Three state outputs
TTL compatible inputs and outputs
Low power:
- Standby: 60 mA (TTL); 10 mA (CMOS)
- Operation: 180 mA (20 ns); 170 mA (25 ns);
160 mA (30 ns)
D
ESCRIPTION
:
Maxwell Technologies’ 33C408 high-density 4
Megabit SRAM microcircuit features a greater than
100 krad (Si) total dose tolerance, depending upon
space mission. Using Maxwell’s radiation-hard-
ened R
AD
-P
AK
packaging technology, the 33C408
realizes a high density, high performance, and low
power consumption. Its fully static design elimi-
nates the need for external clocks, while the
CMOS circuitry reduces power consumption and
provides higher reliability. The 33C408 is equipped
with eight common input/output lines, chip select
and output enable, allowing for greater system flex-
ibility and eliminating bus contention. The 33C408
features the same advanced 512K x 8-bit SRAM,
high-speed, and low-power demand as the com-
mercial counterpart.
Maxwell Technologies' patented R
AD
-P
AK
packag-
ing technology incorporates radiation shielding in
the microcircuit package. It eliminates the need for
box shielding while providing the required radiation
shielding for a lifetime in orbit or space mission. In
a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is
available with screening up to Class S.
Logic Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 33C408RTFI-25 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RTFI-20 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RTFE-30 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RTFE-25 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RTFE-20 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 33C408RTFS-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RTFS-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RTFS-30 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33CAE352 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 33CFA1-K | 功能描述:電源到板 COM FLASH CARD FRAME RoHS:否 制造商:TE Connectivity / AMP 系列:5787444 產(chǎn)品類型:Connectors 觸點(diǎn)類型: 電壓額定值:50 V 電流額定值: 節(jié)距: 位置/觸點(diǎn)數(shù)量:5 安裝風(fēng)格:Through Hole 端接類型: 觸點(diǎn)電鍍:Tin |
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