- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358627 > 33C408RPFB-20 (MAXWELL TECHNOLOGIES) 4 Megabit (512K x 8-Bit) CMOS SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | 33C408RPFB-20 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | SRAM |
| 英文描述： | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 20 ns, DFP32 |
| 封裝： | DFP-32 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 241K |
| 代理商： | 33C408RPFB-20 |
3
All data sheets are subject to change without notice
2002 Maxwell Technologies
All rights reserved.
4 Megabit (512K x 8-Bit) CMOS SRAM
33C408
04.16.02 REV 8
T
ABLE
4. 33C408 R
ECOMMENDED
O
PERATING
C
ONDITIONS
(V
CC
= 5.0 + 10%, T
A
= -55
TO
+125
°
C,
UNLESS
OTHERWISE
NOTED
)
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Supply Voltage
Ground
Input High Voltage
1
Input Low Voltage
2
Thermal Impedance
V
CC
V
SS
V
IH
V
IL
Θ
JC
4.5
0
2.2
-0.5
--
5.5
0
V
V
V
V
1. V
IH
(max) = V
CC
+2.0V ac (pulse width < 10 ns) for I < 20 mA
2.
V
IL
(mn) = -2.0V ac(pulse width < 10 ns) for I < 20 mA
V
CC
+0.5
0.8
1.21
°C/W
T
ABLE
5. 33C408 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C,
UNLESS
OTHERWISE
SPECIFIED
)
P
ARAMETER
S
YMBOL
C
ONDITION
S
UBGROUPS
M
IN
M
AX
U
NIT
Input Leakage Current
I
LI
I
LO
V
IN
= V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
,
V
OUT
=V
SS
to V
CC
I
OL
= 8mA
I
OH
= -4mA
Mn cycle, 100% Duty, CS=V
IL
, I
OUT
=0mA,
V
IN
= V
IH
or V
IL
1, 2, 3
-2
2
μA
Output Leakage Current
1, 2, 3
-2
2
μA
Output Low Voltage
V
OL
V
OH
I
CC
1, 2, 3
--
0.4
V
Output High Voltage
1, 2, 3
2.4
--
V
Operating Current
-20
-25
-30
1, 2, 3
--
--
--
180
170
160
mA
Standby Power
Supply Current
I
SB
CS = V
IH
, Mn Cycle
1, 2, 3
--
60
mA
CMOS Standby Power
Supply Current
I
SB1
CS > V
CC
- 0.2V, f = 0 MHz, V
IN
> V
CC
- 0.2V
or
V
IN
<
0.2V
V
IN
= 0V, f = 1MHz, T
A
= 25 °C
V
I/O
= 0V
1, 2, 3
--
10
mA
Input Capacitance
1
1. Guaranteed by design.
C
IN
C
I/O
1, 2, 3
--
7
pF
Output Capacitance
1
4, 5, 6
--
8
pF
T
ABLE
6. 33C408 AC T
EST
C
ONDITIONS
AND
C
HARACTERISTICS
(V
CC
= 5.0 + 10%, T
A
= -55
TO
+125
°
C,
UNLESS
OTHERWISE
NOTED
)
P
ARAMETER
M
IN
T
YP
M
AX
U
NITS
Input Pulse Level
Output Timng Measurement Reference Level
0.0
--
--
--
3.0
1.5
V
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 33C408RPFB-25 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RPFB-30 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RPFE-20 | 4 BATTERIES 4/V 80 H WITH 3 PINS RoHS Compliant: NA |
| 33C408RPFE-25 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RPFE-30 | 4 Megabit (512K x 8-Bit) CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 33C408RPFB-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RPFB-30 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RPFE-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RPFE-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
| 33C408RPFE-30 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:4 Megabit (512K x 8-Bit) CMOS SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。