MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
33390
7
DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions of 7.0 V
≤
V
BAT
≤
16 V, -40
°
C
≤
T
A
≤
125
°
C,
SLEEP
= 5.0 V unless otherwise noted. Typical
values reflect the parameter's approximate midpoint average value with V
BAT
= 13 V, T
A
= 25°C. All positive currents are into the
pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS
BUS Voltage Rise Time (Note 8) (9.0 V
≤
V
BAT
≤
16 V, Tx = 7.812 kHz Square
Wave) (see Figure 3)
BUS Load = 3,300 pF and 1.38 k
to GND
BUS Load = 16,500 pF and 300
to GND
t
rise
(BUS)
9.0
9.0
11.15
11.86
15
15
μs
BUS Voltage Fall Time (Note 8) (9.0 V
≤
V
BAT
≤
16 V, Tx = 7.812 kHz Square
Wave) (see Figure 3)
BUS Load = 3,300 pF and 1.38 k
to GND
BUS Load = 16,500 pF and 300
to GND
t
fall
(BUS)
9.0
9.0
10.50
11.17
15
15
μs
Pulse Width Distortion Time (9.0 V
≤
V
BAT
≤
16 V, Tx = 7.812 kHz Square Wave)
(see Figure 4)
BUS Load = 3,300 pF and 1.38 k
to GND
t
pwd
(BUS)
35
62
93
μs
Propagation Delay
Tx Threshold to Rx Threshold
t
pd
(BUS)
–
17.7
25
μs
Tx
Tx to BUS Delay Time (Tx = 2.5 V to V
BUS
= 3.875 V) (see Figure 5)
4X Mode
Normal Mode
t
TxDelay
–
13
2.6
17.3
4.0
24
μs
SLEEP
to Tx Setup Time (see Figure 5)
t
SLEEPTxSU
80
40
–
μs
Rx
Rx Output Delay Time (Tx = 2.5 V to V
BUS
= 3.875 V) (see Figure 6)
Low-to-Output High
High-to-Output Low
t
RxDelay/L–H
t
RxDelay/H–L
–
–
0.11
0.38
2.0
2.0
μs
Rx Output Transition Time (C
Rx
= 50 pF to GND, 10% and 90% Points)
(see Figure 7)
Low-to-Output High
High-to-Output Low
t
RxTrans/L–H
t
RxTrans/H–L
–
–
0.34
0.08
1.0
1.0
μs
Rx Output Transition Time (Note 9) (C
R
x
= 50 pF to GND,
SLEEP
= 0 V, 10% and
90% Points) (see Figure 7)
Low-to-Output High
High-to-Output Low
t
RxTrans/L–H
t
RxTrans/H–L
–
–
0.32
0.08
5.0
5.0
μs
Notes
8.
9.
Typical is the parameter's approximate average value with V
BAT
= 13 V, T
A
= 25°C.
Rx Output Transition Time from a sleep state.
F
Freescale Semiconductor, Inc.
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n
.