參數(shù)資料
型號: 30BQ015PBF
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Schottky 15V 3A 2-Pin SMC Box
中文描述: Schottky (Diodes & Rectifiers) 3.0 Amp 15 Volt
文件頁數(shù): 1/7頁
文件大?。?/td> 111K
代理商: 30BQ015PBF
Document Number: 94178
Revision: 23-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
1
Schottky Rectifier, 3.0 A
VS-30BQ015PbF
Vishay Semiconductors
FEATURES
125 °C T
J
operation (V
R
< 5 V)
Optimized for OR-ing applications
Ultralow forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant to RoHS Directive 2002/95/EC
Designed and qualified for industrial level
DESCRIPTION
The VS-30BQ015PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package
SMC
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
3 A
15 V
0.3 V
50 mA at 100 °C
125 °C
Single die
E
AS
1.5 mJ
Cathode
Anode
S
MC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform
3.0
A
15
V
t
p
= 5 μs sine
1.0 Apk, T
J
= 75 °C
Range
650
A
0.30
V
- 55 to 125
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-30BQ015PbF
UNITS
Maximum DC reverse voltage
V
R
15
V
Maximum working peak reverse voltage
V
RWM
25
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
I
F(AV)
50 % duty cycle at T
L
= 83 °C, rectangular waveform
50 % duty cycle at T
L
= 78 °C, rectangular waveform
3.0
A
4.0
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
650
10 ms sine or 6 ms rect. pulse
75
Non-repetitive avalanche energy
E
AS
T
J
= 25 °C, I
AS
= 0.5 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.5
mJ
Repetitive avalanche current
I
AR
0.5
A
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