參數(shù)資料
型號(hào)： 30A01C
廠商： Sanyo Electric Co.,Ltd.
英文描述： Low-Frequency General-Purpose Amplifier Applications
中文描述： 低頻通用放大器應(yīng)用
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 41K
代理商： 30A01C
30A01C
No.7509-1/4
Applications
Low-frequency power amplifier, muting circuit.
Features
Large current capacity.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=0.67
[IC=0.3A, IB=15mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
mA
mW
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
--30
--30
--5
--300
--600
300
150
Mounted on a glass epoxy board (20
30
1.6mm).
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
--0.1
--0.1
500
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Marking : XQ
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=--30V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--10mA
VCE=--10V, IC=--50mA
VCB=--10V, f=1MHz
IC=--100mA, IB=--5mA
IC=--100mA, IB=--5mA
μ
A
μ
A
200
520
MHz
pF
mV
V
3
--110
--0.9
--220
--1.2
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7509
30A01C
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2018B
[30A01C]
O3003 TS IM TA-100648
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.4
0.95 0.95
1.9
2.9
0
1
2
0
0.16
0 to 0.1
0
1
2
3
1
相關(guān)PDF資料
PDF描述
30A01SP Low-Frequency General-Purpose Amplifier Applications
30A02SS Low-Frequency General-Purpose Amplifier Applications
30A SCHOTTKY RECTIFIER
30BF20 SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE
30BQ015PBF SCHOTTKY RECTIFIER 3 Amp
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
30A01C-TB-E 制造商:SANYO 功能描述:PNP 30V 10mA 200 to 500 CP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 30V 0.3A SOT23
30A01M-TL-E 制造商:SANYO 功能描述:PNP 30V 10mA 200 to 500 MCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 30V 0.3A SOT323 制造商:Sanyo 功能描述:0
30A01S 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:30A01S
30A01SP 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amplifier Applications
30A01SS-TL-E 功能描述:TRANS PNP 30V 0.3A 3SSFP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*