參數(shù)資料
型號: 2STW100
廠商: STMICROELECTRONICS
元件分類: 功率晶體管
英文描述: 25 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 3/7頁
文件大?。?/td> 111K
代理商: 2STW100
2STW100, 2STW200
Electrical characteristics
Doc ID 17235 Rev 1
3/7
2
Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCE = 80 V
0.5
mA
ICEV
Collector cut-off current
(VBE = - 0.3 V)
VCE = 80 V
0.1
mA
ICEO
Collector cut-off current
(IB = 0)
VCE = 60 V
0.5
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
2
mA
VCEO(sus)
(1)
1.
Pulse test: pulse duration
300 s, duty cycle 2 %.
For PNP type voltage and current values are negative.
Collector-emitter
sustaining voltage (IB = 0)
IC = 50 mA
80
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 5 A
IB = 20 mA
IC = 10 A
IB = 40 mA
IC = 20 A IB = 80 mA
1.2
1.75
3.5
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 20 A IB = 80 mA
3.3
V
VBE
(1)
Base-emitter voltage
IC = 10 A VCE = 3 V
1
3
V
hFE
(1)
DC current gain
IC = 5 A
VCE = 3 V
IC = 10 A
VCE = 3 V
IC = 20 A VCE = 3 V
600
500
300
15000
12000
6000
VF
(1)
Diode forward voltage
IF = 10 A
TBD
V
Is/b
Second breakdown
current
VCE = 25 V t = 500 ms
TBD
A
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