參數(shù)資料
型號(hào)： 2STN5551
廠商： STMICROELECTRONICS
元件分類： 功率晶體管
英文描述： 0.6 A, 160 V, NPN, Si, POWER TRANSISTOR
封裝： ROHS COMPLIANT PACKAGE-4
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 111K
代理商： 2STN5551
2STN5551
Electrical characteristics
Doc ID 15183 Rev 2
3/7
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off
current (IE = 0)
VCB = 120 V
Tamb = 100 °C
50
nA
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = 4 V
5
nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 100 A
180
V
V(BR)CEO
(1)
1.
Pulse test: pulse duration
≤ 300 s, duty cycle ≤ 2 %
Collector-emitter
breakdown voltage
(IB = 0)
IC = 1 mA
160
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 10 A
6
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 10 mA
IB = 1 mA
IC = 50 mA
IB = 5 mA
0.15
0.2
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = 10 mA
IB = 1 mA
IC = 50 mA
IB = 5 mA
1
V
hFE
(1)
DC current gain
IC = 1 mA
VCE = 5 V
IC = 10 mA
VCE = 5 V
IC = 50 mA
VCE = 5 V
80
30
250
hfe
Small signal current
gain
VCE = 10 V
IC = 1 mA
f = 1 kHz
50
200
CCBO
Collector-base
capacitance (IE = 0)
VCB = 10 V
f
≤ 1 MHz
6pF
CEBO
Emitter-base
capacitance (IC = 0)
VEB = 0.5 V
f = 1 MHz
20
pF
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參數(shù)描述
2STP535FP 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2STPB3006 制造商:Apex Material Technology Corp. 功能描述:TPIN 6LOBE BUTA2 M3X6
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