參數(shù)資料
型號(hào): 2SK974L
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 54K
代理商: 2SK974L
2SK974(L), 2SK974(S)
4
50
100
0
Case Temperature T
C
(°C)
150
10
C
Power vs. Temperature Derating
20
30
Maximum Safe Operation Area
D
D
0.3
Drain to Source Voltage V
DS
(V)
1.0
3
1.0
3
10
10
30
100
0.1
100
0.3
30
0.1
μ
s
1m
PW=1 m 1So)
DCOpeaion(T
C
=25C
lmtedby R
DS
(on
Ta = 25°C
10
μ
s
Typical Output Characteristics
6
Drain to Source Voltage V
DS
(V)
8
4
2
10
D
D
0
2
4
6
8
10
V
GS
= 2 V
Pulse Test
10 V
5 V
4 V
3 V
3.5 V
2.5 V
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
4
2
1
0
5
2
4
6
8
10
D
D
T
C
= 25°C
75°C
V
= 10 V
Pulse Test
–25°C
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8
4
2
0
10
0.4
0.6
0.8
1.0
0.2
D
V
D
(
Pulse Test
5 A
I
D
= 1 A
2 A
2
Drain Current I
D
(A)
5
1.0
0.5
20
0.2
0.5
1.0
2
5
0.2
0.1
0.05
10
Static Drain to Source on State
Resistance vs. Drain Current
S
R
D
(
)
V
GS
= 4 V
10 V
Pulse Test
80
Case Temperature T
C
(°C)
120
40
0
0.1
0.2
0.3
0.4
0.5
–40
0
160
Static Drain to Source on State
Resistance vs. Temperature
S
R
D
(
)
I
D
= 5 A
Pulse Test
V
GS
= 4 V
V
GS
= 10 V
5 A
1 A, 2 A
1 A, 2 A
Forward Transfer Admittance
vs. Drain Current
10
5
2
1.0
0.5
0.2
0.1
0.05
0.1
0.2
Drain Current I
D
(A)
0.5
1.0
5
2
F
T
C
= 25°C
V
= 10 V
Pulse Test
–25°C
75°C
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參數(shù)描述
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