參數(shù)資料
型號(hào): 2SK973S
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁(yè)數(shù): 4/7頁(yè)
文件大小: 54K
代理商: 2SK973S
2SK973(L), 2SK973(S)
4
50
100
0
Case Temperature T
C
(°C)
150
5
C
10
15
Power vs. Temperature Derating
Maximum Safe Operation Area
D
D
0.3
Drain to Source Voltage V
DS
(V)
1.0
3
1.0
3
10
10
30
50
0.1
100
0.3
30
0.05
0.1
100
μ
s
1m
DCOeain(T
C
5C
Ta = 25°C
10
μ
s
lmtedby R
DS
on
Typical Output Characteristics
6
Drain to Source Voltage V
DS
(V)
8
4
2
10
D
D
0
1
2
3
4
5
V
GS
= 2 V
Pulse Test
10 V
5 V
4 V
3 V
3.5 V
2.5 V
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
4
2
1
0
5
1
2
3
4
5
D
D
T
C
= 25°C
75°C
V
= 10 V
Pulse Test
–25°C
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8
4
2
0
10
0.8
1.2
1.6
2.0
0.4
D
V
D
Pulse Test
I
D
= 1 A
5 A
2 A
2
Drain Current I
D
(A)
5
1.0
0.5
20
0.2
0.5
1.0
2
5
0.2
0.1
0.05
10
Static Drain to Source on State
Resistance vs. Drain Current
S
R
D
)
V
GS
= 4 V
10 V
Pulse Test
80
Case Temperature T
C
(°C)
120
40
0
0.2
0.4
0.6
0.8
1.0
–40
0
160
Static Drain to Source on State
Resistance vs. Temperature
S
R
D
)
I
D
= 2 A
Pulse Test
V
GS
= 4 V
V
GS
= 10 V
5 A
1 A
1 A, 2 A
Forward Transfer Admittance
vs. Drain Current
10
5
2
1.0
0.5
0.2
0.1
0.05
0.1
0.2
Drain Current I
D
(A)
0.5
1.0
5
2
F
y
T
C
= 25°C
V
= 10 V
Pulse Test
–25°C
75°C
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2SK974 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:高速高壓MOS大功率場(chǎng)效應(yīng)管
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2SK974(S) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA
2SK974L 制造商:Renesas Electronics Corporation 功能描述:
2SK974L(E) 制造商:Renesas Electronics Corporation 功能描述: