參數(shù)資料
型號(hào): 2SK972
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 4/7頁
文件大?。?/td> 53K
代理商: 2SK972
2SK972
4
50
100
0
Case Temperature T
C
(°C)
150
20
C
40
60
Power vs. Temperature Derating
Maximum Safe Operation Area
D
D
0.3
Drain to Source Voltage V
DS
(V)
1.0
3
10
30
100
10
300
500
0.1
100
3
30
0.5
1.0
Ta = 25°C
10
μ
s
100
s
1m
DCOpeaion(T
C
=25C
Opeaioninthsaeai
lmtedb R
DS(on
Typical Output Characteristics
6
Drain to Source Voltage V
DS
(V)
8
4
2
10
D
D
0
10
20
30
40
50
V
GS
= 2.5 V
Pulse Test
10 V
8 V
6 V
3.5 V
3.0 V
4.0 V
4.5 V
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
4
2
1
0
5
10
20
30
40
50
D
D
T
C
= 25°C
–25°C
75°C
V
= 10 V
Pulse Test
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8
4
2
0
10
2
3
4
5
1
D
V
D
Pulse Test
I
D
= 50 A
10 A
20 A
10
Drain Current I
D
(A)
20
5
2
100
0.02
0.05
0.1
0.2
0.5
1
0.01
0.005
50
Static Drain to Source on State
Resistance vs. Drain Current
S
R
D
)
V
GS
= 4 V
10 V
Pulse Test
80
Case Temperature T
C
(°C)
120
40
0
0.02
0.04
0.06
0.08
0.10
–40
0
160
Static Drain to Source on State
Resistance vs. Temperature
S
R
D
)
I
D
= 20 A
10 A
20 A
Pulse Test
V
GS
= 4 V
V
GS
= 10 V
5 A
10 A
5 A
Forward Transfer Admittance
vs. Drain Current
100
50
20
10
5
2
1
0.5
1.0
2
5
10
50
Drain Current I
D
(A)
20
F
y
T
C
= 25°C
V
= 10 V
Pulse Test
–25°C
75°C
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2SK973 Silicon N-Channel MOS FET(N溝道MOSFET)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK972(E) 制造商:Renesas Electronics 功能描述:Cut Tape
2SK973 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK973(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-251AA
2SK973(S) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252AA
2SK973L 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET