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參數(shù)資料
| 型號： | 2SK660 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SK660 |
Data Sheet D10753EJ2V0DS
2
2SK660
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Cut-off Current
I
DSS
V
DS
= 5.0
V, V
GS
= 0
V
60
500
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 5.0
V, I
D
= 1.0
μ
A
1.0
V
Forward Transfer Admittance
| y
fs1
|
V
DS
= 5.0
V, I
D
= 30
μ
A, f = 1.0 kHz
150
μ
S
Forward Transfer Admittance
| y
fs2
|
V
DS
= 5.0
V, V
GS
= 0
V, f = 1.0 kHz
150
1200
μ
S
Input Capacitance
C
iss
4.5
6.0
pF
Output Capacitance
C
oss
1.5
3.0
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 5.0
V
V
GS
= 0
V
f = 1.0 MHz
1.2
3.0
pF
Noise Voltage
NV
See Test Circuit
1.0
3.0
μ
V
NOISE VOLTAGE TEST CIRCUIT
NV (r.m.s)
R = 1 k
C = 10 pF
+4.5 V
JIS A
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| 2SK662 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 2SK662-R |
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