參數(shù)資料
型號: 2SK522
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Junction FET
中文描述: 硅N溝道結(jié)場效應(yīng)管
文件頁數(shù): 4/8頁
文件大?。?/td> 36K
代理商: 2SK522
2SK522
4
Forward Transfer Admittance vs.
Drain to Source Voltage
15
10
5
Drain to Source Voltage V
DS
(V)
F
y
0
5
10
15
Ta = –25
°
C
25
°
C
75
°
C
V
= 0
f = 1 kHz
Forward Transfer Admittance vs.
Drain Current
Drain Current I
D
(mA)
F
y
0.2
0.5
1.0
2
5
10
20
V
= 5 V
f = 1 kHz
0.5
1.0
2
5
20
50
10
Input Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
I
2
5
10
20
0.1
0.2
1.0
2
0.5
5
10
V
= 0
f = 1 MHz
Reverse Transfer Capacitance vs.
Drain to Source Voltage
R
Drain to Source Voltage V
DS
(V)
0.05
0.1
0.2
0.5
1.0
2
5
0.1
0.2
0.5
1.0
2
5
10
V
= 0
f = 1 MHz
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