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參數(shù)資料
| 型號： | 2SK439 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 24K |
| 代理商： | 2SK439 |
2SK439
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
GSS
I
D
I
G
Pch
20
V
Gate to source voltage
±
5
V
Drain current
30
mA
Gate current
±
1
mA
Channel power dissipation
300
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
20
—
—
V
I
D
= 100
μ
A, V
GS
= –4 V
Gate cutoff current
I
GSS
I
DSS
*
1
V
GS(off)
—
—
±
20
nA
V
GS
=
±
5 V, V
DS
= 0
V
DS
= 10 V, V
GS
= 0
V
DS
= 10 V, I
D
= 10
μ
A
V
DS
= 10 V, V
GS
= 0, f = 1 kHz
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
Drain current
4
—
12
mA
Gate to source cutoff voltage
0
—
–2.0
V
Forward transfer admittance
fs
y
8
14
—
mS
Input capacitance
Ciss
—
2.5
—
pF
Reverse transfer capacitance
Crss
—
0.03
—
pF
Output capacitance
Coss
—
1.8
—
pF
V
DS
= 5 V, V
GS
= 0, f = 1 MHz
V
= 10 V, V
GS
= 0,
f = 100 MHz
Power gain
PG
—
30
—
dB
Noise figure
Note:
Grade
NF
—
2.0
—
dB
1. The 2SK439 is grouped by I
DSS
as follows.
D
E
F
I
DSS
4 to 8
6 to 10
8 to 12
See characteristic curves of 2SK359.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK439D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK |
| 2SK439E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK |
| 2SK439F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK |
| 2SK44 | 制造商:Distributed By MCM 功能描述:SUB ONLY FET |
| 2SK440 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220AB |
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